Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor

Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor

This work studies van der Waals InSe crystals grown on China space station. Microgravity growth condition annihilates interlayer stacking-faults in InSe, activates its intrinsic sliding ferroelectricity and enhances the super linear emission property.

  • Benz, K. W. & Dold, P. Crystal growth under microgravity: present results and future prospects towards the international space station. J. Cryst. Growth237-239, 16381645 (2002). Google Schol… [+8084 chars]

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    Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor - FHMnews