Polycrystalline κ-Ga2O3 on Si(100) substrates with GZO buffer layers

Polycrystalline κ-Ga2O3 on Si(100) substrates with GZO buffer layers

RSC Adv., 2026, 16,16595-16600DOI: 10.1039/D6RA00464D, Paper Open Access &nbsp This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Yoshiaki Hirai, Htet Su Wai, Toshiyuki Kawaharamura, Noriaki Ikenaga, Osamu Ueda, Hiroyuki Nishin…

* Corresponding authors a Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan E-mail:m4621034@edu.kit.ac.jp b School of Systems Engineering, Kochi University of … [+432 chars]